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 CHA4042
23-34GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4042 is a three-stage pHEMT HPA MMIC designed for point-to-point and multi-point radio, and other Ka-band applications. The CHA4042 provides 25dBm nominal output power at 1dB gain compression over the 23-34GHz frequency range, and 20dB small signal gain. This product will be available in chip form.
Main Features
3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Frequency Range: 23-34GHz Gain: 20dB Output Power (P-1dB): 25dBm Output TOI: 33dBm Input Return Loss: 18dB Output Return Loss: 11dB Bias: 6V, 300mA Dimensions: 1.93 x 1.09 x 0.07mm
Predicted Gain & Return Loss Predicted Gain & Return
25
Gain
0
20
S.S. Gain (dB)
-5 -10 -15
Return Loss (dB)
15 10
Output Rloss
Input Rloss
5 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Frequency (GHz) -20 -25
Ref. : DSCHA40422218 -06-Aug.-02
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA4042
23-34GHz High Power Amplifier
Predicted Output Power at 1-dB Gain Compression
28 OUTPUT POWER (P-1dB) (dBm) 27 26 25 24 23 22 21 20 19 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz)
Absolute Maximum Ratings Tamb = 25 C (1)
Symbol Vds Ids Vgs Vdg Pin Ta Tstg
* * *
Parameter Drain bias voltage_small signal Drain bias current_small signal Gate bias voltage Maximum Drain Gate voltage (Vd-Vg) Maximum peak input power overdrive (2) Operating Temperature Range (3) Storage Temperature Range
Values 6.25 450 -2 to +0.4 +8 +15 -45 to +80 -55 to +125
Unit V mA V V dBm C C
Operation of this device above any one of these parameters may cause permanent damage. Duration < 1 s AuSn solder mount to CuW or CuMo carrier assumed
Ref. : DSCHA40422218 -06-Aug.-02 2/6 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
23-34GHz High Power Amplifier
CHA4042
Schematic
Vd1 Vd2 Vd3
RF
RF Out
Vg1
Vg2
Vg3
Typical Bias Conditions Tamb. = 25 C
Symbol Vd 1, 2, 3 Vg 1, 2, 3 Idd
Parameter Drain bias voltage Gate bias voltage Total drain current
Values 6.0 -0.5 300
Unit V V mA
Ref. : DSCHA40422218 -06-Aug.-02
3/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA4042
23-34GHz High Power Amplifier
MMIC Outline & Bond Pads Not to scale, dimensions are in millimeters
1.341 .821 .970
1.090
14
13
12
11
10
9
.338
.467
15 8 1 2 3 4 5 6 7
.240
.000 1.341 .245 1.819 1.930 .389
#1, 7, 9: GND #4, 5, 11: GND #14: GND #2: VG1 #3: VG2 #6: VG3 #8: RF OUT #10: VD3 #12: VD2 #13: VD1 #15: RF IN
Ref. : DSCHA40422218 -06-Aug.-02
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
.000
Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad
(0.080 x 0.080) (0.080 x 0.090) (0.122 x 0.080) (0.100 x 0.150) (0.100 x 0.150) (0.100 x 0.100) (0.100 x 0.260) (0.100 x 0.100) (0.100 x 0.100) (0.100 x 0.100) (0.100 x 0.200)
Units: millimeters Thickness: 0.070
Chip size : 1930m +/-35m x 1090m +/- 35m
4/6
Specifications subject to change without notice
23-34GHz High Power Amplifier
CHA4042
MMIC Assembly and Bonding Diagram ( not to scale )
VD
0.01 100p 100p
VD1 VD2
VD3
50 Ohm line
50 Ohm line
R F IN VG VG VG R F O U
RFin
RFout
100p
100p
Vg
0.01
Ref. : DSCHA40422218 -06-Aug.-02
5/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA4042
23-34GHz High Power Amplifier
Ordering Information
Chip form : CHA4042-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA40422218 -06-Aug.-02
6/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09


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