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CHA4042 23-34GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4042 is a three-stage pHEMT HPA MMIC designed for point-to-point and multi-point radio, and other Ka-band applications. The CHA4042 provides 25dBm nominal output power at 1dB gain compression over the 23-34GHz frequency range, and 20dB small signal gain. This product will be available in chip form. Main Features 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Frequency Range: 23-34GHz Gain: 20dB Output Power (P-1dB): 25dBm Output TOI: 33dBm Input Return Loss: 18dB Output Return Loss: 11dB Bias: 6V, 300mA Dimensions: 1.93 x 1.09 x 0.07mm Predicted Gain & Return Loss Predicted Gain & Return 25 Gain 0 20 S.S. Gain (dB) -5 -10 -15 Return Loss (dB) 15 10 Output Rloss Input Rloss 5 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Frequency (GHz) -20 -25 Ref. : DSCHA40422218 -06-Aug.-02 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA4042 23-34GHz High Power Amplifier Predicted Output Power at 1-dB Gain Compression 28 OUTPUT POWER (P-1dB) (dBm) 27 26 25 24 23 22 21 20 19 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz) Absolute Maximum Ratings Tamb = 25 C (1) Symbol Vds Ids Vgs Vdg Pin Ta Tstg * * * Parameter Drain bias voltage_small signal Drain bias current_small signal Gate bias voltage Maximum Drain Gate voltage (Vd-Vg) Maximum peak input power overdrive (2) Operating Temperature Range (3) Storage Temperature Range Values 6.25 450 -2 to +0.4 +8 +15 -45 to +80 -55 to +125 Unit V mA V V dBm C C Operation of this device above any one of these parameters may cause permanent damage. Duration < 1 s AuSn solder mount to CuW or CuMo carrier assumed Ref. : DSCHA40422218 -06-Aug.-02 2/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 23-34GHz High Power Amplifier CHA4042 Schematic Vd1 Vd2 Vd3 RF RF Out Vg1 Vg2 Vg3 Typical Bias Conditions Tamb. = 25 C Symbol Vd 1, 2, 3 Vg 1, 2, 3 Idd Parameter Drain bias voltage Gate bias voltage Total drain current Values 6.0 -0.5 300 Unit V V mA Ref. : DSCHA40422218 -06-Aug.-02 3/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA4042 23-34GHz High Power Amplifier MMIC Outline & Bond Pads Not to scale, dimensions are in millimeters 1.341 .821 .970 1.090 14 13 12 11 10 9 .338 .467 15 8 1 2 3 4 5 6 7 .240 .000 1.341 .245 1.819 1.930 .389 #1, 7, 9: GND #4, 5, 11: GND #14: GND #2: VG1 #3: VG2 #6: VG3 #8: RF OUT #10: VD3 #12: VD2 #13: VD1 #15: RF IN Ref. : DSCHA40422218 -06-Aug.-02 Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 .000 Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad Bond Pad (0.080 x 0.080) (0.080 x 0.090) (0.122 x 0.080) (0.100 x 0.150) (0.100 x 0.150) (0.100 x 0.100) (0.100 x 0.260) (0.100 x 0.100) (0.100 x 0.100) (0.100 x 0.100) (0.100 x 0.200) Units: millimeters Thickness: 0.070 Chip size : 1930m +/-35m x 1090m +/- 35m 4/6 Specifications subject to change without notice 23-34GHz High Power Amplifier CHA4042 MMIC Assembly and Bonding Diagram ( not to scale ) VD 0.01 100p 100p VD1 VD2 VD3 50 Ohm line 50 Ohm line R F IN VG VG VG R F O U RFin RFout 100p 100p Vg 0.01 Ref. : DSCHA40422218 -06-Aug.-02 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA4042 23-34GHz High Power Amplifier Ordering Information Chip form : CHA4042-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA40422218 -06-Aug.-02 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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